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23 March 2009 A CD AFM study of the plasma impact on 193nm photoresist LWR: role of plasma UV and ions
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Abstract
193nm photoresist pattern printed by optical lithography are known to present significant sidewalls roughness, also called linewidth roughness (LWR) after the lithographic step, that is partially transferred into the underlayers during plasma etching processes. This study is aimed to identify the factors that impact the photoresist pattern sidewalls roughness during plasma exposure. Among them, plasma VUV light (110-210nm) is identified as being the main contributor to LWR decrease during plasma etching processes. Moreover, it was found that the LWR obtained after plasma exposure is strongly dependent on the surface roughening mechanisms taking place at the top of the resist pattern.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. Pargon, M. Martin, K. Menguelti, L. Azarnouche, J. Foucher, and O. Joubert "A CD AFM study of the plasma impact on 193nm photoresist LWR: role of plasma UV and ions", Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 72720M (23 March 2009); https://doi.org/10.1117/12.813493
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