23 March 2009 Product-driven material characterization for improved scatterometry time-to-solution
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Abstract
This paper discusses a novel methodology of material characterization that directly utilizes the scatterometry targets on the product wafer to determine the optical properties (n&k) of various constituent materials. Characterization of optical constants, or dispersions, is one of the first steps of scatterometry metrology implementation. A significant benefit of this new technique is faster time-to-solution, since neither multiple single-film depositions nor multi-film depositions on blanket/product wafers are needed, making obsolete a previously required-but very time-consuming-step in the scatterometry setup. We present the basic elements of this revolutionary method, describe its functionality as currently implemented, and contrast/compare results obtained by traditional methods of materials characterization with the new method. The paper covers scatterometry results from key enabling metrology applications, like high-k metal gate (postetch and post-litho) and Metal 2 level post-etch, to explore the performance of this new material characterization approach. CDSEM was used to verify the accuracy of scatterometry solutions. Furthermore, Total Measurement Uncertainty (TMU) analysis assisted in the interpretation of correlation data, and shows that the new technique provides measurement accuracy results equivalent to, and sometimes better than, traditional extraction techniques.
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Alok Vaid, Alok Vaid, Carsten Hartig, Carsten Hartig, Matthew Sendelbach, Matthew Sendelbach, Cornel Bozdog, Cornel Bozdog, Hyang Kyun Kim, Hyang Kyun Kim, Michael Sendler, Michael Sendler, Yoel Cohen, Yoel Cohen, Victor Kucherov, Victor Kucherov, Boaz Brill, Boaz Brill, Stanislav Stepanov, Stanislav Stepanov, "Product-driven material characterization for improved scatterometry time-to-solution", Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 72720V (23 March 2009); doi: 10.1117/12.814380; https://doi.org/10.1117/12.814380
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