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23 March 2009 Performance verification of resist loss measurement method using top-view CD-SEM images for hyper-NA lithography
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Abstract
In this study, the principle of the resist loss measurement method proposed in our previous paper[1] was verified. The technique proposes the detection of resist loss variation using the pattern top roughness (PTR) index determined by scanning electron microscope images. By measuring resist loss with atomic force microscope, we confirmed that the PTR showed a good correlation with the resist loss and was capable of detecting variations within an accuracy of 20 nm for the evaluated sample. Furthermore, the effect of PTR monitoring on line width control was evaluated by comparing the error in line width control after eliminating undesirable resist loss patterns to that of conventional line width monitoring. The error of line width control was defined as the deviation range in post-etch line widths from post-litho values. Using PTR monitoring, the error in line width control decreased from 10 nm to less than 3 nm, thus confirming the effectiveness of this method.
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Mayuka Osaki, Maki Tanaka, Chie Shishido, Shaunee Cheng, David Laidler, Monique Ercken, and Efrain Altamirano "Performance verification of resist loss measurement method using top-view CD-SEM images for hyper-NA lithography", Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 727211 (23 March 2009); https://doi.org/10.1117/12.813472
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