24 March 2009 Diffraction-based overlay metrology for double patterning technologies
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Abstract
The extension of optical lithography to 32nm and beyond is made possible by Double Patterning Techniques (DPT) at critical levels of the process flow. The ease of DPT implementation is hindered by increased significance of critical dimension uniformity and overlay errors. Diffraction-based overlay (DBO) has shown to be an effective metrology solution for accurate determination of the overlay errors associated with double patterning [1, 2] processes. In this paper we will report its use in litho-freeze-litho-etch (LFLE) and spacer double patterning technology (SDPT), which are pitch splitting solutions that reduce the significance of overlay errors. Since the control of overlay between various mask/level combinations is critical for fabrication, precise and accurate assessment of errors by advanced metrology techniques such as spectroscopic diffraction based overlay (DBO) and traditional image-based overlay (IBO) using advanced target designs will be reported. A comparison between DBO, IBO and CD-SEM measurements will be reported. . A discussion of TMU requirements for 32nm technology and TMU performance data of LFLE and SDPT targets by different overlay approaches will be presented.
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Prasad Dasari, Prasad Dasari, Rahul Korlahalli, Rahul Korlahalli, Jie Li, Jie Li, Nigel Smith, Nigel Smith, Oleg Kritsun, Oleg Kritsun, Cathy Volkman, Cathy Volkman, } "Diffraction-based overlay metrology for double patterning technologies", Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 727212 (24 March 2009); doi: 10.1117/12.816590; https://doi.org/10.1117/12.816590
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