23 March 2009 Development of optical simulation tool for defect inspection
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Much effort has been done to detect the defects of interest (DOI) by optical inspection systems because the size of the DOI shrinks according to the design rule of a semiconductor device. Performance of the inspection system is dependent on complicated optical conditions on illumination and collection systems including wavelength and polarization filter. Magnitude of defect signal for a given optical condition was estimated using a simulation tool to find a suitable optical condition and technologies required in the future. This tool, consisting of a near-field calculation using Finite Difference Time Domain (FDTD) methods and an image formation calculation based on Fourier optics, is applicable not only to Köhler illumination system but also to confocal system and dark field system. We investigated defect inspection methods for the 45 nm and the next technology nodes. For inspection of various defects, the system using several wavelengths is suitable. For inspection of a specific defect, the system with polarization control is suitable. Our calculation suggests that the defect detection sensitivity for the 1X nm technology node should be increased by more than 10 times compared to the 45 nm technology node.
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Takayoshi Fujii, Takayoshi Fujii, Yusaku Konno, Yusaku Konno, Naotada Okada, Naotada Okada, Kiminori Yoshino, Kiminori Yoshino, Yuuichiro Yamazaki, Yuuichiro Yamazaki, } "Development of optical simulation tool for defect inspection", Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 72721A (23 March 2009); doi: 10.1117/12.812472; https://doi.org/10.1117/12.812472

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