As design rule of semiconductor device is shrinking, pattern profile management is becoming more critical, then high
accuracy and high frequency is required for CD (Critical Dimension) and LER (Line Edge Roughness) measurements.
We already presented the technology to inspect the pattern profile variations of entire wafer with high throughput  .
Using the technology, we can inspect CD&LER variations over the entire wafer quickly, but we could not separate the
signal into CD and LER variations. This time, we measured the Stokes parameters, i.e., polarization status, in the
reflected light from defected patterns. As the result, we could know the behavior of the polarization status changes by
dose & focus defects, and we found the way to separate the signal into CD&LER variations, i.e. dose errors and focus
errors, from S2 & S3 of Stokes parameters. We verified that we were able to calculate the values of CD&LER variations
from S2 & S3 by the experiments. Furthermore, in order to solve the issue that many images are needed to calculate S2
& S3 values, we developed the new method to get CD&LER variations accurately in short time.