23 March 2009 Sub-50-nm pitch size grating reference for CD-SEM magnification calibration
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Abstract
We have developed a novel multi-layer grating pattern with a sub-50-nm pitch size for CD-SEM magnification calibration instead of the conventional 100-nm pitch grating reference. The sub-50-nm pitch size grating reference was fabricated by multi-layer deposition of alternative two alternating materials and then the material-selective chemical etching of the cleaved cross-sectional surface. A line and space pattern with 10-nm pitch size was easily resolved and a high-contrast secondary electron image of the grating pattern was obtained under 1-kV acceleration voltage using CD-SEM. The uniformity of the 20-nm pitch size of the grating was less than 1 nm in 3σ. The line edge roughness of the grating pattern was also less than 1 nm. Such a fine and uniform grating pattern will fulfill the requirements of a magnification calibration reference for next-generation CD-SEM.
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Yoshinori Nakayama, Jiro Yamamoto, Hiroki Kawada, "Sub-50-nm pitch size grating reference for CD-SEM magnification calibration", Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 727224 (23 March 2009); doi: 10.1117/12.814048; https://doi.org/10.1117/12.814048
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