23 March 2009 Applications of AFM in semiconductor R&D and manufacturing at 45 nm technology node and beyond
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Continuing demand for high performance microelectronic products propelled integrated circuit technology into 45 nm node and beyond. The shrinking device feature geometry created unprecedented challenges for dimension metrology in semiconductor manufacturing and research and development. Automated atomic force microscope (AFM) has been used to meet the challenge and characterize narrower lines, trenches and holes at 45nm technology node and beyond. AFM is indispensable metrology techniques capable of non-destructive full three-dimensional imaging, surface morphology characterization and accurate critical dimension (CD) measurements. While all available dimensional metrology techniques approach their limits, AFM continues to provide reliable information for development and control of processes in memory, logic, photomask, image sensor and data storage manufacturing. In this paper we review up-todate applications of automated AFM in every mentioned above semiconductor industry sector. To demonstrate benefits of AFM at 45 nm node and beyond we compare capability of automated AFM with established in-line and off-line metrologies like critical dimension scanning electron microscopy (CDSEM), optical scatterometry (OCD) and transmission electronic microscopy (TEM).
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Moon-Keun Lee, Moon-Keun Lee, Minjung Shin, Minjung Shin, Tianming Bao, Tianming Bao, Chul-Gi Song, Chul-Gi Song, Dean Dawson, Dean Dawson, Dong-Chul Ihm, Dong-Chul Ihm, Vladimir Ukraintsev, Vladimir Ukraintsev, "Applications of AFM in semiconductor R&D and manufacturing at 45 nm technology node and beyond", Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 72722R (23 March 2009); doi: 10.1117/12.813389; https://doi.org/10.1117/12.813389


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