23 March 2009 WLCD: a new system for wafer level CD metrology on photomasks
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Abstract
With decreasing feature size, the requirements for CD uniformity (CDU) on the wafer have become crucial for achieving the required yield in the wafer fab. This is related to tighter CDU specifications on the photomask. Currently, mask CDU is mainly measured by mask CD SEM tools. However, due to strong OPC and high MEEF mask CDU is not directly related to wafer CDU. A new Aerial Imaging based optical system has been developed by Carl Zeiss SMS which measures wafer level CD already on photomasks under scanner conditions. First results of the alpha tool show that the new tool has extremely good CD repeatability and stability. Furthermore, the effect of the scanner settings on CD uniformity is demonstrated.
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Sven Martin, Sven Martin, Holger Seitz, Holger Seitz, Wolfgang Degel, Wolfgang Degel, Ute Buttgereit, Ute Buttgereit, Thomas Scherübl, Thomas Scherübl, } "WLCD: a new system for wafer level CD metrology on photomasks", Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 72722T (23 March 2009); doi: 10.1117/12.814728; https://doi.org/10.1117/12.814728
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