24 March 2009 Use of 3D metrology for process control
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Proceedings Volume 7272, Metrology, Inspection, and Process Control for Microlithography XXIII; 727235 (2009); doi: 10.1117/12.816370
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States
Abstract
As device structures continue to shrink and new materials are introduced, Three Dimensional (3D) Metrology becomes more important. The creation of 3D Metrology data is defined as the generation of statistically relevant 3D information used in R&D and/or semiconductor manufacturing. Parameters of interest are: profile shape, side wall angle, material properties, height of the structure, as well as the variation within a die, on the wafer, between wafers. In this paper we will show how this information is used to calibrate process control systems in a semiconductor fab. Also, results will be shown on how this information may be used to compare different types of Metrology equipment e.g. CD-SEM and optical CD metrology techniques like scatterometry. Certain applications, such as the generation of profile information for 55 nm dense contact holes in photoresist, require new technology to minimize damage to the soft photoresist. A new technique called in-situ broadband argon cleaning will be presented. Finally, the application of the argon column for protective coating deposition of sub-45 nm photoresist lines will be discussed.
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Bart Rijpers, Jo Finders, Hidekazu Suzuki, Toshiaki Fujii, Yuichiro Yamazaki, Hideaki Abe, Fabián Pérez-Willard, "Use of 3D metrology for process control", Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 727235 (24 March 2009); doi: 10.1117/12.816370; https://doi.org/10.1117/12.816370
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KEYWORDS
3D metrology

Transmission electron microscopy

Argon

Fourier transforms

Photoresist materials

Scatterometry

Scanning transmission electron microscopy

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