23 March 2009 Comparative study of process window identification methods for 45 nm device and beyond
Author Affiliations +
Abstract
Lithography process control becomes increasingly challenging as the design rules shrink. To tackle the issue of identifying the process window for lithography, we systematically compared three different approaches for 45 nm process wafer with two variables: Inspection mode (FEM or PWQ) and Analysis methodology (Manual or Design Based Binning). We found that PWQ + DBB provided the best results.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
HoSeong Kang, HoSeong Kang, SooCheol Lee, SooCheol Lee, MinHo Kim, MinHo Kim, KiHo Kim, KiHo Kim, YongTeak Jeong, YongTeak Jeong, YeonHo Pae, YeonHo Pae, ChangHo Lee, ChangHo Lee, } "Comparative study of process window identification methods for 45 nm device and beyond", Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 72723D (23 March 2009); doi: 10.1117/12.814019; https://doi.org/10.1117/12.814019
PROCEEDINGS
5 PAGES


SHARE
Back to Top