23 March 2009 Results from prototype die-to-database reticle inspection system
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Abstract
A prototype die-to-database high-resolution reticle defect inspection system has been developed for 32nm and below logic reticles, and 4X Half Pitch (HP) production and 3X HP development memory reticles. These nodes will use predominantly 193nm immersion lithography (with some layers double patterned), although EUV may also be used. Many different reticle types may be used for these generations including: binary (COG, EAPSM), simple tritone, complex tritone, high transmission, dark field alternating (APSM), mask enhancer, CPL, and EUV. Finally, aggressive model based OPC is typically used, which includes many small structures such as jogs, serifs, and SRAF (sub-resolution assist features), accompanied by very small gaps between adjacent structures. The architecture and performance of the prototype inspection system is described. This system is designed to inspect the aforementioned reticle types in die-todatabase mode. Die-to-database inspection results are shown on standard programmed defect test reticles, as well as advanced 32nm logic, and 4X HP and 3X HP memory reticles from industry sources. Direct comparisons with currentgeneration inspection systems show measurable sensitivity improvement and a reduction in false detections.
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Bo Mu, Bo Mu, Aditya Dayal, Aditya Dayal, Bill Broadbent, Bill Broadbent, Phillip Lim, Phillip Lim, Arosha Goonesekera, Arosha Goonesekera, Chunlin Chen, Chunlin Chen, Kevin Yeung, Kevin Yeung, Becky Pinto, Becky Pinto, } "Results from prototype die-to-database reticle inspection system", Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 72723O (23 March 2009); doi: 10.1117/12.815574; https://doi.org/10.1117/12.815574
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