Paper
23 March 2009 Immersion scanner proximity matching using angle resolving scatterometry metrology
Ren-Jay Kou, Reiner Jungblut, Jan Hauschild, Shih-En Tseng, Jason Shieh, Jim Chen, Alek Chen, Koen Schreel
Author Affiliations +
Abstract
The fingerprint of optical proximity effect, OPE, is required to develop each process node's optical proximity correction (OPC) model. The OPC model should work equally well on exposure systems of the type on which the model was developed and of different type. Small differences in optical and mechanical scanner properties can lead to a different CD characteristic for a given OPC model. It becomes beneficial to match the OPE of one scanner to the scanner population in a fab. Here, we report on a matching technique based on measured features in resist employing either CDSEM or scatterometry. We show that angle resolving scatterometry allows improving the metrology throughput and repeatability. The sensitivity of the CD as a function of the scanner adjustments and the effect of scanner tuning can be described more precisely by scatterometry using an identical number of printed features for measurement. In our example the RMS deviation between the measured and the predicted tuning effect of scatterometry is 0.2 nm compared to 0.8 nm of CD-SEM allowing to set tighter matching targets.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ren-Jay Kou, Reiner Jungblut, Jan Hauschild, Shih-En Tseng, Jason Shieh, Jim Chen, Alek Chen, and Koen Schreel "Immersion scanner proximity matching using angle resolving scatterometry metrology", Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 727240 (23 March 2009); https://doi.org/10.1117/12.816455
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Scatterometry

Scanners

Metrology

Semiconducting wafers

Optical proximity correction

Systems modeling

Reticles

Back to Top