Comparison of physical gate-CD with in-die at-speed non-contact measurements for bin-yield and process optimization

J. S. Vickers; J. Galvier; W. Doedel; G. Steinbrueck; B. Borot; M. Gatefait; P. Gouraud; P. Gros; G. Johnson; M. Babazadeh; M. Pelella; N. Pakdaman

doi:10.1117/12.823822

23 March 2009 Comparison of physical gate-CD with in-die at-speed non-contact measurements for bin-yield and process optimization

J. S. Vickers, J. Galvier, W. Doedel, G. Steinbrueck, B. Borot, M. Gatefait, P. Gouraud, P. Gros, G. Johnson, M. Babazadeh, M. Pelella, N. Pakdaman

Author Affiliations +

Proceedings Volume 7272, Metrology, Inspection, and Process Control for Microlithography XXIII; 72724C (2009) https://doi.org/10.1117/12.823822
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

We report on a performance-based measurement (PBM) technique from a volume production 65-nm multi-product wafer (MPW) process that shows far more sensitivity than the standard physical gate-length (CD) measurements. The performance (the electrical "effective" gate length, L_eff) variation results measured by PBM can NOT be explained alone by CD (physical gate) measurement and show that the non-destructive (non-contact) PBM is able to monitor and control at first-level of electrical connectivity (≥ M1), the bin-yield determining in-die variation that are NOT captured or realized by physical CD measurement. Along with this higher sensitivity, we also show that the process-induced variation (excursion) has a distinct signature versus "nominal" expected behavior.

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J. S. Vickers, J. Galvier, W. Doedel, G. Steinbrueck, B. Borot, M. Gatefait, P. Gouraud, P. Gros, G. Johnson, M. Babazadeh, M. Pelella, and N. Pakdaman "Comparison of physical gate-CD with in-die at-speed non-contact measurements for bin-yield and process optimization", Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 72724C (23 March 2009); https://doi.org/10.1117/12.823822

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