23 March 2009 Implementation of multiple ROI with single FOV for advanced mask metrology
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Abstract
As technology nodes go down to 45nm and below, mask metrology becomes more important as the critical features decrease in size, while, at the same time, the number of measurements that need to be performed increases. OPC and RET put further burden on metrology as it is typical to measure more than one dimension on a single feature. In order to maximize the throughput of metrology tools and to keep up with the demand for more measurements, we have implemented the ability to measure multiple CD sites within a field of view without any stage movement in fully automated ways in a production environment. This in turn reduces total mask measurement time and helps to increase tool capacity
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Kyu-hwa Jeong, Hatsey Frezghi, Malahat Tavassoli, Stephen Kim, Ray Morgan, "Implementation of multiple ROI with single FOV for advanced mask metrology", Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 72724D (23 March 2009); doi: 10.1117/12.826930; https://doi.org/10.1117/12.826930
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