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1 April 2009 Topcoat-free ArF negative tone resist
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Abstract
We report the development and applications of ArF negative tone resist for ArF immersion lithography. New developed topcoat-free ArF negative tone resists has sufficient water repellent capability that is applicable to over 700mm/s scan speed water immersion exposure tool and suitable leaching suppression capability within reaching specification of exposure tool. We demonstrated lithographic performance of topcoat-free negative tone resist utilizing 1.07NA immersion tool and confirmed the lithographic window of 55nm 1L1S and 50nm 1L1S. And 27.4nm of isolated space pattern at over dose condition of 55nm 1L1S patterning. This result shows the possibility of topcoat free negative tone resist for dual trench based litho-etch-litho-etch double patterning. Additionally we have demonstrated contact hole patterning utilizing double exposure and generated 65nm gridded contact hole patterns utilizing 0.92NA ArF scanner with applicable pattern profiles.
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Tomoyuki Ando, Sho Abe, Ryoichi Takasu, Jun Iwashita, Shogo Matsumaru, Ryoji Watanabe, Komei Hirahara, Yujiro Suzuki, Miki Tsukano, and Takeshi Iwai "Topcoat-free ArF negative tone resist", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 727308 (1 April 2009); https://doi.org/10.1117/12.813787
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