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1 April 2009 Photoresist stabilization for double patterning using 172 nm photoresist curing
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Abstract
We describe progress in low-k1 factor double patterning using 172 nm ultraviolet (UV) curing as a resist stabilization method. Factors that have contributed to enhanced patterning capability include a) resists design and optimization for both patterning and UV curing; b) use of unique R&D tooling capabilities to rapidly identify and optimize key process variables; c) development of simple process metrics for characterizing double patterning process quality, and d) use of 172 nm-resistant antireflective materials. A designed resist, XP-7600A, was selected for detailed evaluation based on superior patterning and curing behavior (less than 10 percent volumetric shrinkage during cure.) Process optimization on 172 nm damage-prone antireflective coatings produced 60 nm cross-grid contact holes at 0.93 NA (litho k1 = 0.28) with good uniformity when an ancillary 150 °C post-UV bake was used. Additional optimization on improved antireflective coatings yielded superior process latitude (>20 percent 172 nm dose latitude) and also demonstrated that a UV-cure-only resist stabilization process flow may be attainable. Under optimized conditions, highly uniform 60 nm half-pitch cross-grid contacts with cross-sectional area uniformity (1σ) of approximately 200 nm2 (5 percent) are produced at 135 nm resist film thickness.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thomas I. Wallow, Junyan Dai, Charles R. Szmanda, Hiram Cervera, Chi Truong, Nikolaos Bekiaris, Jong-Wook Kye, Ryoung-Han Kim, Harry J. Levinson, and Glen Mori "Photoresist stabilization for double patterning using 172 nm photoresist curing", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72730D (1 April 2009); https://doi.org/10.1117/12.814468
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