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1 April 2009 DUV-assisted e-beam resist process
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Electron beam direct writing (EBDW) resist process is slow in throughput but has the highest linewidth resolution among all the lithography techniques. However the e-beam energy is high enough to cut off the polymer chain of DUV chemically amplified resist (CAR) and thus in this paper, DUV-assisted e-beam resist process is studied to increase throughput. The C/H critical dimension (CD) with e-beam exposure only increases for larger dose. E-beam dose-to-size of C/H is found to be independent on pattern density. The smallest CD resolved is 30.2 nm for 30 nm designed CD. DUV pre-exposed resist resolves the same C/H CD size with lower e-beam dose. Largest e-beam dose reduction with DUV-assistance is ~40% for 50 and 70 nm designed CD of C/Hs. BARC coating and multiple DUV pre-exposures with variable depths are studied for obtaining a vertical profile like that exposed by e-beam only.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wei-Su Chen, Yen-Cheng Li, and Ming-Jinn Tsai "DUV-assisted e-beam resist process", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72730E (1 April 2009);

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