DUV-assisted e-beam resist process

Wei-Su Chen; Yen-Cheng Li; Ming-Jinn Tsai

doi:10.1117/12.813626

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1 April 2009 DUV-assisted e-beam resist process

Wei-Su Chen, Yen-Cheng Li, Ming-Jinn Tsai

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Proceedings Volume 7273, Advances in Resist Materials and Processing Technology XXVI; 72730E (2009) https://doi.org/10.1117/12.813626
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

Electron beam direct writing (EBDW) resist process is slow in throughput but has the highest linewidth resolution among all the lithography techniques. However the e-beam energy is high enough to cut off the polymer chain of DUV chemically amplified resist (CAR) and thus in this paper, DUV-assisted e-beam resist process is studied to increase throughput. The C/H critical dimension (CD) with e-beam exposure only increases for larger dose. E-beam dose-to-size of C/H is found to be independent on pattern density. The smallest CD resolved is 30.2 nm for 30 nm designed CD. DUV pre-exposed resist resolves the same C/H CD size with lower e-beam dose. Largest e-beam dose reduction with DUV-assistance is ~40% for 50 and 70 nm designed CD of C/Hs. BARC coating and multiple DUV pre-exposures with variable depths are studied for obtaining a vertical profile like that exposed by e-beam only.

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Wei-Su Chen, Yen-Cheng Li, and Ming-Jinn Tsai "DUV-assisted e-beam resist process", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72730E (1 April 2009); https://doi.org/10.1117/12.813626

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