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1 April 2009 0.30k1 CH delineation with novel image reversal materials
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Abstract
Resolution enhancement by novel image reversal (RENOIR) process and materials are studied for shrinkage of hole size and pitch. The process approach is based on formation of pillar pattern and its conversion to hole pattern with wet development (Fig.1). Fine pillar arrays were imaged by combination of high-resolution positive tone resist and X-Y double line exposure with hyper NA immersion lithography. To achieve the reversal characteristics, we have developed the novel resist material, which becomes of solvent insoluble and developer soluble after pillar patterning. The material realizes the solubility switch just with hard bake treatment. Reversal film material is coated over the pillar patterns, and subsequent development process converts pillars into hole patterns. 30nm size 96nm pitch hole was delineated with 150nm DoF and 10% exposure latitude by 1.2NA immersion exposure.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Hatakeyama, K. Katayama, T. Yoshihara, Y. Kawai, and T. Ishihara "0.30k1 CH delineation with novel image reversal materials", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72730L (1 April 2009); https://doi.org/10.1117/12.816084
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