1 April 2009 Post-develop blob defect reduction
Author Affiliations +
This study reports on blob defect reduction and process impacts by Acid Rinse System. Blob defects that appear after develop are a common problem with i-line, KrF, ArF and ArF-immersion resists. Last year we reported Blob defects were influenced by the develop process and were able to be decreased by improving process. Furthermore we identified blob defects were caused from alkaline developer and could be reduced by neutralizing Acid Rinse. In this work, we designed a novel develop process and system that reduced blob defects. We evaluated this system on the non-topcoat immersion resist. The blob defects on immersion resist were also eliminated by this system but affected by each resist surface condition. We also evaluated the impacts from Acid rinse for some kinds of patterns and resists, because we needed to indentify whether there were negatively process impacts. We reports that Acid Rinse System significantly reduced blob defect counts, and whether influenced other process impacts. Finally we report the mechanism of the blob defects reduction.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masahiko Harumoto, Masahiko Harumoto, Sei Negoro, Sei Negoro, Akihiro Hisai, Akihiro Hisai, Michio Tanaka, Michio Tanaka, Glen Mori, Glen Mori, Mark Slezak, Mark Slezak, "Post-develop blob defect reduction", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72730P (1 April 2009); doi: 10.1117/12.813605; https://doi.org/10.1117/12.813605

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