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1 April 2009 Effects of carbon/hardmask interactions on hardmask performance
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Abstract
Interactions between the silicon hardmask and the photoresist have received considerable attention for utilization of these materials in a trilayer scheme. In contrast, the interactions between the carbon layer and the silicon hardmask have received little or no consideration. In this paper, we present the effects of these interactions on the performance of the silicon hardmask. Poor interactions were observed to result in a more hydrophilic surface and poor lithographic performance of the silicon hardmask. However, beneficial interactions between the carbon layer and the silicon hardmask resulted in a silicon film that was denser with a hydrophobic surface. The resulting denser film had a slower CF4 etch rate and produced square, clean profiles.
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Charles J. Neef, Brian Smith, Chris James, Zhimin Zhu, and Michael Weigand "Effects of carbon/hardmask interactions on hardmask performance", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 727311 (1 April 2009); https://doi.org/10.1117/12.814257
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