1 April 2009 Radiation sensitive developable bottom anti-reflective coatings (DBARC): recent results
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Abstract
Second generation, radiation sensitive, developable 193 Bottom Antireflective coatings (DBARCs) are made solvent resistant through a crosslinking mechanism activated during post apply bake (PAB) that is reversible by acid catalyzed reaction upon exposure of the DBARC/resist stack. This allows coating the resists on the DBARC, after PAB, without dissolution of the antireflective coating. This DBARC approach avoids the plasma etch breakthrough needed for conventional bottom antireflective coatings which are irreversibly crosslinked, while maintaining excellent reflectivity control, typically lower than 1% on bare Si. We will give an update on the performance our latest 193 nm DBARC prototype materials used with different conventional alicyclic based 193 nm resists. For instance, using a binary mask with conventional illumination several of our prototype DBARC formulations were able to resolve 120 nm trench features with a 250 nm pitch.
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Francis M. Houlihan, Alberto Dioses, Takanori Kudo, Meng Li, Lin Zhang, Sumathy Vasanthan, Srinivasan Chakrapani, Deepa Parthasarathy, Charito Antonio, Edward Ng, Ping-Hung Lu, Mark Neisser, and Munirathna Padmanaban "Radiation sensitive developable bottom anti-reflective coatings (DBARC): recent results", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 727316 (1 April 2009); doi: 10.1117/12.816375; https://doi.org/10.1117/12.816375
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