Our research activities concern actual measurements of simulation parameters for EUVL. The
conventional EUVL simulation method involves obtaining parameters by exposing the resist to EUV.
However, EUV exposure equipment is costly, and the types of exposure equipment available are limited.
For these reasons, we explored the possibility of performing EUVL simulations using parameters
obtained with KrF exposures, based on the notion that if no significant differences could be detected
between parameters obtained with KrF exposures and EUV exposures, the simpler KrF exposure method
could be used to obtain valid simulation parameters for EUVL.
We compared parameters obtained with KrF exposures and EUV exposures using EUV resist. Both
exposure operations yielded similar values. Based on this result, we concluded it would be possible and
valid to perform EUVL lithography simulations through EUV exposure simulations based on simulation
parameters obtained with KrF exposures.