1 April 2009 Study of the simulation parameter for EUVL
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Proceedings Volume 7273, Advances in Resist Materials and Processing Technology XXVI; 72731G (2009); doi: 10.1117/12.814990
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States
Abstract
Our research activities concern actual measurements of simulation parameters for EUVL. The conventional EUVL simulation method involves obtaining parameters by exposing the resist to EUV. However, EUV exposure equipment is costly, and the types of exposure equipment available are limited. For these reasons, we explored the possibility of performing EUVL simulations using parameters obtained with KrF exposures, based on the notion that if no significant differences could be detected between parameters obtained with KrF exposures and EUV exposures, the simpler KrF exposure method could be used to obtain valid simulation parameters for EUVL. We compared parameters obtained with KrF exposures and EUV exposures using EUV resist. Both exposure operations yielded similar values. Based on this result, we concluded it would be possible and valid to perform EUVL lithography simulations through EUV exposure simulations based on simulation parameters obtained with KrF exposures.
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Atsushi Sekiguchi, "Study of the simulation parameter for EUVL", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72731G (1 April 2009); doi: 10.1117/12.814990; https://doi.org/10.1117/12.814990
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KEYWORDS
Extreme ultraviolet lithography

Extreme ultraviolet

Light

Lithography

Diffusion

Light sources

Line edge roughness

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