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1 April 2009 Development of polymers for non-CAR resists for EUV lithography
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Abstract
Three strategies for approaching the design and synthesis of non-chemically amplified resists (non-CARs) are presented. These are linear polycarbonates, star polyester-blk-poly(methyl methacrylate) and comb polymers with polysulfone backbones. The linear polycarbonates were designed to cleave when irradiated with 92 eV photons and high Tg alicyclic groups were incorporated into the backbone to increase Tg and etch resistance. The star block copolymers were designed to have a core that is sensitive to 92 eV photons and arms that have the potential to provide properties such as high Tg and etch resistance. Similarly the polysulfone comb polymers were designed to have an easily degradable polymer backbone and comb-arms that impart favorable physical properties. Initial patterning results are presented for a number of the systems.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrew K. Whittaker, Idriss Blakey, James Blinco, Kevin S. Jack, Kirsten Lawrie, Heping Liu, Anguang Yu, Michael Leeson, Wang Yeuh, and Todd Younkin "Development of polymers for non-CAR resists for EUV lithography", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 727321 (1 April 2009); https://doi.org/10.1117/12.820493
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