Stochastic modeling in lithography: autocorrelation behavior of catalytic reaction-diffusion systems

Chris A. Mack

doi:10.1117/12.815378

1 April 2009 Stochastic modeling in lithography: autocorrelation behavior of catalytic reaction-diffusion systems

Chris A. Mack

Proceedings Volume 7273, Advances in Resist Materials and Processing Technology XXVI; 72732G (2009) https://doi.org/10.1117/12.815378
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

Reaction-diffusion chemical systems where the catalyst of the reaction is the only diffusing species are investigated. Here, the correlation length and Hurst roughness exponent are derived in one-, two- and three-dimensional firstorder catalytic reaction-diffusion problems. These results are relevant to many chemical systems, and in particular to chemically amplified photoresists used in semiconductor lithography, where the correlation length and Hurst exponent affect the line-edge roughness of sub-100-nm printed features.

Citation Download Citation

Chris A. Mack "Stochastic modeling in lithography: autocorrelation behavior of catalytic reaction-diffusion systems", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72732G (1 April 2009); https://doi.org/10.1117/12.815378

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