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1 April 2009 Development of new phenylcalix[4]resorcinarene: its application to positive-tone molecular resist for EB and EUV lithography
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Abstract
We have developed new positive-tone molecular resist material, C-4-(2-methyl-2-adamantyloxycarbonylmethoxy) phenylcalix[4]resorcinarene (MGR110P). MGR110P showed high solubility in both conventional resist solvents such as propylene glycol monomethyl ether and cyclohexanone. MGR110P was single molecular without molecular weight disperse. A positive-tone molecular resist based on MGR110P was evaluated by EB lithography (EBL) and EUV lithography (EUVL). This resist could be developed a standard alkaline developer of 0.26N TMAHaq. EB patterning results showed the resolution of this resist on a HMDS primed Si wafer to be 40 nm line and space at an EB exposure dose of 28μC/cm2. The line edge roughness (LER) showed 3.8 nm at 50 nm line and space pattern at EB exposure dose of 26μC/cm2. Unfortunately, 30 nm line and space pattern collapsed. In addition, EUV patterning results showed the resolution on an organic layer substrate to be 45 nm line and space at an EUV exposure dose of 10.3 mJ/cm2. Unfortunately, 40 nm to 30 nm line and space pattern collapsed.
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Masatoshi Echigo and Dai Oguro "Development of new phenylcalix[4]resorcinarene: its application to positive-tone molecular resist for EB and EUV lithography", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72732Q (1 April 2009); https://doi.org/10.1117/12.813487
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