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1 April 2009 Development of novel positive-tone resists for EUVL
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Abstract
We will discuss the effect of protecting group distribution on lithographic performance with Cyclic-Low-Molecular (CLM) resists which have some or no distribution of the protecting groups. By comparing the result of CLM resist with distribution of the protecting group and CLM resist with no distribution of that, the latter gave high resolution of sub 30nm hp by Electron beam (EB) Lithography. And also we have developed new CLM-resist for which the substituted position and number of protecting group have no dispersion, and evaluated their EB and Extreme Ultraviolet (EUV) patterning performance. The EUV lithographic evaluation of the novel low molecular weight amorphous resists 'CLMC-Resist' was carried out at SFET (small field exposure tool) in Semiconductor Leading Edge Technologies Inc. (Selete). Newly synthesized resists have shown high performance of sensitivity and resolution under EB or EUV exposures. In this paper, we outline the design of new molecular weight resists. The material properties, photochemistry and the patterning capability of these newly synthesizes low molecular weight resists are reported.
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Takanori Owada, Akinori Yomogita, Takashi Kashiwamura, Toshiaki Kusaba, Shinji Miyamoto, and Tetsuro Takeya "Development of novel positive-tone resists for EUVL", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72732R (1 April 2009); doi: 10.1117/12.813631; https://doi.org/10.1117/12.813631
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