1 April 2009 Advanced immersion contact hole patterning for sub 40nm memory applications: a fundamental resist study
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Abstract
In this paper we investigate fundamental resist properties to enhance resolution and focus margin for immersion contact hole patterning. Basic chemistry factors have been used to manipulate the iso-focal region (the region of smallest critical dimension variation through focus) of the photoresist and study the impact on resolution and focus margin for small isolated contact holes. Acid diffusion length is one of the key factors investigated, which can be controlled by polymer, PAG, quencher, bake temperature and bake time. The various criteria investigated for this study were: focus and exposure latitude for dense L/S, dense C/H and semi-dense C/H. The effect of manipulating the acid diffusion of the photoresist on imaging small contact holes was verified using ultra-high NA immersion imaging at 1.35 NA.
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Yun-Kyeong Jang, Yun-Kyeong Jang, Jin-Young Yoon, Jin-Young Yoon, Shi-Yong Lee, Shi-Yong Lee, Kwang-Sub Yoon, Kwang-Sub Yoon, Seok-Hwan Oh, Seok-Hwan Oh, Seong-Woon Choi, Seong-Woon Choi, Woo-Sung Han, Woo-Sung Han, Seokho Kang, Seokho Kang, Thomas Penniman, Thomas Penniman, Duk-Soo Kim, Duk-Soo Kim, Dong Won Chung, Dong Won Chung, Sung-Seo Cho, Sung-Seo Cho, Cheng Bai Xu, Cheng Bai Xu, George G. Barclay, George G. Barclay, } "Advanced immersion contact hole patterning for sub 40nm memory applications: a fundamental resist study", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 727339 (1 April 2009); doi: 10.1117/12.814483; https://doi.org/10.1117/12.814483
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