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1 April 2009 High-Si content BARC for dual-BARC systems such as trilayer patterning
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Abstract
This work discusses the requirements and performance of Honeywell's middle layer material, UVAS, for tri-layer patterning. UVAS is a high Si content polymer synthesized directly from Si containing starting monomer components. The monomers are selected to produce a film that meets the requirements as a middle layer for tri-layer patterning (TLP) and gives us a level of flexibility to adjust the properties of the film to meet the customer's specific photoresist and patterning requirements. Results of simulations of the substrate reflectance versus numerical aperture, UVAS thickness, and under layer film are presented. ArF photoresist line profiles and process latitude versus UVAS bake at temperatures as low as 150ºC are presented and discussed. Immersion lithographic patterning of ArF photoresist line space and contact hole features will be presented. A sequence of SEM images detailing the plasma etch transfer of line space photoresist features through the middle and under layer films comprising the TLP film stack will be presented. Excellent etch selectivity between the UVAS and the organic under layer film exists as no edge erosion or faceting is observed as a result of the etch process. A detailed study of the impact of a PGMEA solvent photoresist rework process on the lithographic process window of a TLP film stack was performed with the results indicating that no degradation to the UVAS film occurs.
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Joseph Kennedy, Song-Yuan Xie, Ze-Yu Wu, Ron Katsanes, Kyle Flanigan, Kevin Lee, Mark Slezak, Zhi Liu, and Shang-Ho Lin "High-Si content BARC for dual-BARC systems such as trilayer patterning", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72733M (1 April 2009); doi: 10.1117/12.814440; https://doi.org/10.1117/12.814440
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