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1 April 2009 Lithographic evaluation and chemical modeling of acid amplifiers used in EUV photoresists
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Abstract
This paper describes the lithographic properties of fifteen acid amplifiers (AAs) and the chemical modeling approach used to predict their thermal stability in an ESCAP polymer resist system at 70 and 110 °C. Specifically, we show how added AAs affect the sensitivity (Eo and Esize), resolution, line edge roughness (LER), exposure latitude, and Z-parameter of ESCAP resists. We find that acid amplifiers that generate fluorinated sulfonic acids give the best combination of sensitivity, LER, and exposure latitude. Additionally, we show that these compounds are not photochemically active. Combining thermodynamic and kinetic modeling has allowed us to predict the relative enthalpies of activation for catalyzed and uncatalyzed decomposition pathways and compare the results to experimental thermal stability tests.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert Brainard, Craig Higgins, Seth Kruger, Srividya Revuru, Brian Cardineau, Sarah Gibbons, Dan Freedman, Harun Solak, Wang Yueh, and Todd Younkin "Lithographic evaluation and chemical modeling of acid amplifiers used in EUV photoresists", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72733Q (1 April 2009); https://doi.org/10.1117/12.814308
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