1 April 2009 Non-CA resists for 193 nm immersion lithography: effects of chemical structure on sensitivity
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Abstract
Initial studies are presented on the use of polysulfones as non-chemically amplified resists (non-CARs) for 193 nm immersion lithography. Polynorbornene sulfone films on silicon wafers have been irradiated with 193 nm photons in the absence of a photo-acid generator. Chemical contrast curves and contrast curves were obtained via spectroscopic ellipsometry and grazing angle - attenuated total reflectance FTIR spectroscopy. Results were consistent with previously reported mechanisms for the degradation of aliphatic polysulfones with ionizing radiation. It was shown that E0 values could be reduced significantly by using a post exposure bake step, which propagated depolymerization of the polymer. Initial patterning results down to 50 nm half pitch were demonstrated with EUV photons.
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Idriss Blakey, Idriss Blakey, Lan Chen, Lan Chen, Yong-Keng Goh, Yong-Keng Goh, Kirsten Lawrie, Kirsten Lawrie, Ya-Mi Chuang, Ya-Mi Chuang, Emil Piscani, Emil Piscani, Paul A. Zimmerman, Paul A. Zimmerman, Andrew K. Whittaker, Andrew K. Whittaker, } "Non-CA resists for 193 nm immersion lithography: effects of chemical structure on sensitivity", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72733X (1 April 2009); doi: 10.1117/12.814076; https://doi.org/10.1117/12.814076
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