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16 March 2009 Overcoming the challenges of 22-nm node patterning through litho-design co-optimization
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Abstract
Historically, lithographic scaling was driven by both improvements in wavelength and numerical aperture. Recently, the semiconductor industry completed the transition to 1.35NA immersion lithography. The industry is now focusing on double patterning techniques (DPT) as a means to circumvent the limitations of Rayleigh diffraction. Here, the IBM Alliance demonstrates the extendibility of several double patterning solutions that enable scaling of logic constructs by decoupling the pattern spatially through mask design or temporally through innovative processes. This paper details a set of solutions that have enabled early 22 nm learning through careful lithography-design optimization.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin Burkhardt, J. C. Arnold, Z. Baum, S. Burns, J. Chang, J. Chen, J. Cho, V. Dai, Y. Deng, S. Halle, G. Han, S. Holmes, D. Horak, S. Kanakasabapathy, R. H. Kim, A. Klatchko, C. S. Koay, A. Krasnoperova, Y. Ma, E. McLellan, K. Petrillo, S. Schmitz, C. Tabery, Y. Yin, L. Zhuang, Y. Zou, J. Kye, V. Paruchuri, S. Mansfield, C. Spence, and M. Colburn "Overcoming the challenges of 22-nm node patterning through litho-design co-optimization", Proc. SPIE 7274, Optical Microlithography XXII, 727404 (16 March 2009); https://doi.org/10.1117/12.814433
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