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16 March 2009 Impact of CD and overlay errors on double-patterning processes
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Abstract
Double patterning (DP) is today the main solution to extend immersion lithography to the 32 nm node and beyond. Pitch splitting process with hardmask transfer and spacer process have been developed at CEA-LETI-Minatec. This paper focuses on experimental data using dry ArF lithography with a k1 factor of 0.20 ; the relative impact of each DP step on overlay and CD uniformity budgets is analyzed. In addition, topography issues related to the presence of the patterned hard mask layer during the second imaging step is also investigated. Tool-to-itself overlay, image placement on the reticle and wafer deformation induced by this DP process are evaluated experimentally and resulting errors on CD budget have been determined. CD uniformity error model developed by Nikon describing the relationship between CD and overlay in different DP processes is validated experimentally.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Céline Lapeyre, Sébastien Barnola, Isabelle Servin, Stéphanie Gaugirana, Vincent Salvetat, Nobutaka Magome, Andrew J. Hazelton, and Martin McCallum "Impact of CD and overlay errors on double-patterning processes", Proc. SPIE 7274, Optical Microlithography XXII, 72740W (16 March 2009); https://doi.org/10.1117/12.814165
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