16 March 2009 Calibrating OPC model with full CD profile data for 2D and 3D patterns using scatterometry
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Proceedings Volume 7274, Optical Microlithography XXII; 727415 (2009); doi: 10.1117/12.814955
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States
The ability to manage critical dimensions (CDs) of structures on IC devices is vital to improving product yield and performance. It is challenging to achieve accurate metrology data as the geometries shrink beyond 40 nm features. At this technology node CDSEM noise and resist LER are of significant concerns1. This paper examines the extendibility of scatterometry techniques to characterize structures that are close to limits of lithographic printing and to extract full profile information for 2D and 3D features for OPC model calibration2. The resist LER concerns are diminished because of the automatic averaging that scatterometry provides over the measurement pad; this represents a significant added value for proper OPC model calibration and verification. This work develops a comparison matrix to determine the impact of scatterometry data on OPC model calibration with conventional CDSEM measurements. The paper will report test results for the OPC model through process data for accuracy and predictability.
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Aasutosh D. Dave, Oleg Kritsun, Yunfei Deng, Kenji Yoshimoto, Jie Li, Jiangtao Hu, "Calibrating OPC model with full CD profile data for 2D and 3D patterns using scatterometry", Proc. SPIE 7274, Optical Microlithography XXII, 727415 (16 March 2009); doi: 10.1117/12.814955; https://doi.org/10.1117/12.814955

Data modeling

3D modeling



Optical proximity correction

3D metrology

Critical dimension metrology

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