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16 March 2009 Advanced aberration control in projection optics for double patterning
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Abstract
Wavefront aberrations of the projection optics induce unignorable focus and overlay errors dependent on the shape of the device pattern and illumination settings. Thus, the 32nm node and the subsequent double patterning lithographic generation require ever more stringent control of aberrations. For the most recent exposure tools with polarized illumination and high throughput capabilities in particular, due attention needs to be paid to the influences of aberrations caused by polarization and exposure load. A system for measuring and correcting polarization aberrations and lens heating aberrations has been developed, and its technical details and application examples are presented in this paper. Furthermore, improvement in aberration control on the next generation exposure tool compatible with double patterning is stated as well.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toshiyuki Yoshihara, Takashi Sukegawa, Nobuhiko Yabu, Masatoshi Kobayashi, Tadashi Arai, Tsuyoshi Kitamura, Atsushi Shigenobu, Yasuo Hasegawa, and Kazuhiro Takahashi "Advanced aberration control in projection optics for double patterning", Proc. SPIE 7274, Optical Microlithography XXII, 72741L (16 March 2009); https://doi.org/10.1117/12.813625
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