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16 March 2009 A CDU comparison of double patterning process options using Monte Carlo simulation
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Abstract
Determination of the optimal double patterning scheme depends on cost, integration complexity, and performance. This paper will compare the overall CDU performance of litho-etch-litho-etch (LELE) versus a spacer approach. The authors use Monte Carlo simulation as a way to rigorously account for the effect of each contributor to the overall CD variation of the double patterning process. Monte Carlo simulation has been applied to determine CD variations in previous studies1-2, but this paper will extend the methodology into double patterning using a calibrated resist model with topography.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Josh Hooge, Shinichi Hatakeyama, Kathleen Nafus, Steven Scheer, Philippe Foubert, Shaunee Cheng, and Philippe Leray "A CDU comparison of double patterning process options using Monte Carlo simulation", Proc. SPIE 7274, Optical Microlithography XXII, 72741U (16 March 2009); https://doi.org/10.1117/12.814332
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