16 March 2009 Novel OPC method to create sub 45nm contact hole using design based metrology
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Abstract
During the past few years, new technology brought about new problems we face today due to shrinkage of the feature size. Some of the problems such as Mask Error Enhancement Factor (MEEF), overlay control, and so on are crucial because large MEEF can make it difficult to satisfy CD target, and bring about large CD variation. Moreover, it can also lead to degraded CD uniformity which would have an undesired influence on device properties. Recently, 2-D random contact hole is getting crucial because it normally has very large MEEF and cause asymmetric proximity effect which can cause large CD variation, and misalignment of layer-to-layer. In other words, the method of optical proximity correction and building accurate OPC model for 2-D random contact hole pattern could be key factor obtaining better CD uniformity with enhanced overlay margin. Furthermore, in order to get very tangible performance, design based metrology system (DBM) is used to evaluate process performance. Design based metrology systems are able to extract information of whole chip CD variation. On top of that, OPC abnormality can be identified and design feedback can be also disclosed. In this paper, we will investigate novel method for sub 45nm 2-D random contact hole printing. First, optical proximity effect (OPE) for two dimensional layout will be investigated. Second, the results of Variable Threshold Modeling (VTM) for various slit contact hole patterns will be analyzed. Third, model based verification will be done and analyzed through full-chip before creating full-chip mask. Finally, sub 45nm 2-D random contact hole printing performance will be presented by DBM.
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Dong-Jin Lee, Se-young Oh, Jong-cheon Park, Jin-young Choi, Jungchan Kim, Cheolkyun Kim, Donggyu Yim, "Novel OPC method to create sub 45nm contact hole using design based metrology", Proc. SPIE 7274, Optical Microlithography XXII, 72742C (16 March 2009); doi: 10.1117/12.814386; https://doi.org/10.1117/12.814386
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