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16 March 2009 Next generation siloxane-based Bottom Anti-Reflective Coating (BARC) formulations with selective strip rates and required optical properties
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Abstract
Bottom Anti Reflective Coating (BARC) materials are generally used to minimize reflection of incident light from the substrate (Rsub). As IC manufactures move to high NA systems to meet the patterning requirements for next generation technology as well as the use of new lower dielectric constant materials in the back-end-of-line dielectric, the requirements for developing BARC materials with new properties such as faster strip rate and properly tuned optical properties (n = refractive index and k=extinction coefficient) are essential. Some photoresist patterning schemes may also require a dual BARC system such as tri-layer patterning (TLP), which is undergoing extensive evaluation in academia and industries. This work focuses on Honeywell's next generation DUO193 material (DUO193FS), which is a siloxane-based polymer with an organic 193 nm chromophore attached to it. The effects of additives for adjusting strip rate in a wet chemical stripper, while maintaining chemical resistance to a photoresist developer, 2.38% TMAH in water are discussed. Different spectroscopic studies are performed to elucidate the mechanism of faster strip rate. Solvation of silanol groups and their orientation in the presence of additives are found to be secondary mechanism. The primary reason for enhanced strip rate is attributed to the addition of additives A and B, which lower bulk density of the solid film. DUO193FS can be stand alone BARC or used with another BARC as part of a dual BARC system to further minimize Rsub, maintaining resistance to 2.38% TMAH, planarizing any underlying topography and keeping the final film strip rate high.
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Sudip Mukhopadhyay, Joseph Kennedy, Yamini Pandey, Preeti Amin, and Jaswinder Gill "Next generation siloxane-based Bottom Anti-Reflective Coating (BARC) formulations with selective strip rates and required optical properties", Proc. SPIE 7274, Optical Microlithography XXII, 72742J (16 March 2009); https://doi.org/10.1117/12.814398
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