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16 March 2009 Inverse vs. traditional OPC for the 22nm node
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Abstract
The 22nm node will be patterned with very challenging Resolution Enhancement Techniques (RETs) such as double exposure or double patterning. Even with those extreme RETs, the k1 factor is expected to be less than 0.3. There is some concern in the industry that traditional edge-based simulate-then-move Optical Proximity Correction (OPC) may not be up to the challenges expected at the 22nm node. Previous work presented the advantages of a so-called inverse OPC approach when coupled with extreme RETs or illumination schemes. The smooth mask contours resulting from inverse corrections were shown not to be limited by topological identity, feedback locality, or fragment conformity. In short, inverse OPC can produce practically unconstrained and often non-intuitive mask shapes. The authors will expand this comparison between traditional and inverse OPC to include likely 22nm RETs such as double dipole lithography and double patterning, comparing dimensional control through process window for each OPC method. The impact of mask simplification of the inverse OPC shapes into shapes which can be reliably manufactured will also be explored.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James Word, Yuri Granik, Marina Medvedeva, Sergei Rodin, Luigi Capodieci, Yunfei Deng, Jongwook Kye, Cyrus Tabery, Kenji Yoshimoto, Yi Zou, Hesham Diab, Mohamed Gheith, Mohamed Habib, and Cynthia Zhu "Inverse vs. traditional OPC for the 22nm node", Proc. SPIE 7274, Optical Microlithography XXII, 72743A (16 March 2009); doi: 10.1117/12.814339; https://doi.org/10.1117/12.814339
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