The TWINSCAN XT:1000H extends KrF lithography to expose layers that previously required more costly ArF
lithography. These layers, including implants and metal interconnects, contain multiple, through pitch or random, 2-
dimensional (2D) features.
In this paper, we show process windows for 115 nm random via holes using conventional illumination, 110 nm dense &
isolated via holes using a soft quasar illumination shape, 95 nm trenches through pitch with an annular illumination
mode as well as the process windows for a combination of patterns representative for implant structures using a soft
annular illumination mode.
We also prove that the XT:1000H can be integrated in an existing high volume manufacturing environment: transfer of a
65 nm logic metal-1 layer from a high NA XT:1400 dry ArF scanner to the XT:1000H has been evaluated by optimizing
the illumination settings and applying advanced mask design approaches to meet requirements for exposure latitude,
depth of focus and MEEF. In addition, we show that the CD proximity matching performance between the XT:1000H
and NA 0.8 XT:850 KrF scanners can be maximized using illumination setting optimization and EFESE focus scan.
Finally, matched machine overlay performance between the XT:1000H and an XT:1900Gi ArF immersion scanner has