Paper
12 March 2009 Layout electrical cooptimization for increased tolerance to process variations
Author Affiliations +
Abstract
To address the variability challenges inherent to 45 and 32nm as early as possible, a model-based variability analysis has been implemented to predict lithography induced electrical variability in standard cell libraries, and this analysis was used optimize the cell layout and decrease variability by up to 40%.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lionel Riviere-Cazaux, Philippe Hurat, Bala Kasthuri, Larry Layton, and Nishath Verghese "Layout electrical cooptimization for increased tolerance to process variations", Proc. SPIE 7275, Design for Manufacturability through Design-Process Integration III, 727506 (12 March 2009); https://doi.org/10.1117/12.813969
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KEYWORDS
Design for manufacturing

Lithography

Field effect transistors

Optimization (mathematics)

Logic

Photomasks

Reliability

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