12 March 2009 Design specific variation in pattern transfer by via/contact etch process: full-chip analysis
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A novel model-based algorithm provides a capability to control full-chip design specific variation in pattern transfer caused by via/contact etch processes. This physics based algorithm is capable of detecting and reporting etch hotspots based on the fab defined thresholds of acceptable variations in critical dimension (CD) of etched shapes. It can be used also as a tool for etch process optimization to capture the impact of a variety of patterns presented in a particular design. A realistic set of process parameters employed by the developed model allows using this novel via-contact etch (VCE) EDA tool for the design aware process optimization in addition to the "standard" process aware design optimization.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Valeriy Sukharev, Valeriy Sukharev, Ara Markosian, Ara Markosian, Armen Kteyan, Armen Kteyan, Levon Manukyan, Levon Manukyan, Nikolay Khachatryan, Nikolay Khachatryan, Jun-Ho Choy, Jun-Ho Choy, Hasmik Lazaryan, Hasmik Lazaryan, Henrik Hovsepyan, Henrik Hovsepyan, Seiji Onoue, Seiji Onoue, Takuo Kikuchi, Takuo Kikuchi, Tetsuya Kamigaki, Tetsuya Kamigaki, } "Design specific variation in pattern transfer by via/contact etch process: full-chip analysis", Proc. SPIE 7275, Design for Manufacturability through Design-Process Integration III, 72750H (12 March 2009); doi: 10.1117/12.813882; https://doi.org/10.1117/12.813882


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