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18 February 2009 Character of Nd:GdVO4 laser operating at 1.34 μm with low Nd3+ doped concentrations
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Abstract
Three Nd:GdVO4 crystals with Nd3+doped concentrations of 0.1, 0.2 and 0.3 at% were involved in the experiment. Their laser characteristics at 1.34 μm were experimentally tested with a diode-end-pumped configuration and a simple plane-parallel cavity. Maximum output powers of 7.3 W, 8.35 and 9.47 W were achieved, respectively. The thermal stress resistances of these crystals were calculated according to the experimental data.
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Rui Zhou, Shuangchen Ruan, Chenli Du, and Jianquan Yao "Character of Nd:GdVO4 laser operating at 1.34 μm with low Nd3+ doped concentrations", Proc. SPIE 7276, Photonics and Optoelectronics Meetings (POEM) 2008: Laser Technology and Applications, 72760S (18 February 2009); https://doi.org/10.1117/12.821156
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