18 February 2009 Character of Nd:GdVO4 laser operating at 1.34 μm with low Nd3+ doped concentrations
Author Affiliations +
Three Nd:GdVO4 crystals with Nd3+doped concentrations of 0.1, 0.2 and 0.3 at% were involved in the experiment. Their laser characteristics at 1.34 μm were experimentally tested with a diode-end-pumped configuration and a simple plane-parallel cavity. Maximum output powers of 7.3 W, 8.35 and 9.47 W were achieved, respectively. The thermal stress resistances of these crystals were calculated according to the experimental data.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rui Zhou, Rui Zhou, Shuangchen Ruan, Shuangchen Ruan, Chenli Du, Chenli Du, Jianquan Yao, Jianquan Yao, } "Character of Nd:GdVO4 laser operating at 1.34 μm with low Nd3+ doped concentrations", Proc. SPIE 7276, Photonics and Optoelectronics Meetings (POEM) 2008: Laser Technology and Applications, 72760S (18 February 2009); doi: 10.1117/12.821156; https://doi.org/10.1117/12.821156


Thermal effect in pulsed laser diode dual end pumped Tm...
Proceedings of SPIE (September 16 2013)
Research on laser diode end pumped Er YSGG YSGG composited...
Proceedings of SPIE (December 08 2014)
A high power eye safe Er3+ YVO4 laser diode pumped...
Proceedings of SPIE (February 23 2016)
Experiment and design of near diffraction limited cw and Q...
Proceedings of SPIE (September 04 2002)
High power laser diode pumped Nd YAG laser and its...
Proceedings of SPIE (September 04 2002)
Highly reliable high power 266 nm all solid state UV...
Proceedings of SPIE (February 24 2002)

Back to Top