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18 February 2009 Control of the pulse duration in a diode-pumped doubly passively Qswitched Nd:YVO4 laser with Cr4+:YAG and GaAs saturable absorbers
Haikun Zhang, Yuan Yuan, Zhong Zhang, Xiupeng Zheng, Shengzhi Zhao, Kejian Yang
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Proceedings Volume 7276, Photonics and Optoelectronics Meetings (POEM) 2008: Laser Technology and Applications; 72761H (2009) https://doi.org/10.1117/12.823339
Event: Photonics and Optoelectronics Meetings, 2008, Wuhan, China
Abstract
Using both Cr4+:YAG and GaAs saturable absorbers in the same cavity, a diode-pumped doubly passively Q-switched Nd:YVO4 laser is realized. Compared with the solely passively Q-switched laser Cr4+:YAG or GaAs, the pulse shape of doubly Q-switched laser is more symmetric and the pulse duration is compressed. The technique to control the pulse duration has been studied. With different position of the saturable absorber, the pulse duration changes in the range from 41.8ns to 118ns at the pump power of 4.47W, respectively. A rate equation model is introduced to theoretically analyze the results obtained in the experiment, in which the Gaussian spatial distribution of the intracavity photon density and the longitudinal variation of the photon density are taken into account. The numerical calculations of the rate equations are consistent with the experimental results.
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Haikun Zhang, Yuan Yuan, Zhong Zhang, Xiupeng Zheng, Shengzhi Zhao, and Kejian Yang "Control of the pulse duration in a diode-pumped doubly passively Qswitched Nd:YVO4 laser with Cr4+:YAG and GaAs saturable absorbers", Proc. SPIE 7276, Photonics and Optoelectronics Meetings (POEM) 2008: Laser Technology and Applications, 72761H (18 February 2009); https://doi.org/10.1117/12.823339
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KEYWORDS
Gallium arsenide
Q switched lasers
Neodymium lasers
Semiconducting wafers
Crystals
Laser crystals
Pulsed laser operation
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