16 February 2009 The effective mass of electron enhancement in Γ-valley in bulk GaAs under very high electric field investigated by time-domain terahertz spectroscopy
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Abstract
By using the free-space terahertz (THz) electro-optic (EO) sampling technique, the THz waveforms emitted from intrinsic bulk GaAs photoexcited by femtosecond laser pulses under strong bias electric fields up to 300 kV/cm were recorded. The initial acceleration signal in THz emission waveforms, which are corresponding to the acceleration of electrons in the bottom of Γ-valley, has been found to start decreasing with applied electric field above 50 kV/cm, in contrast to the simple picture of electron acceleration in the Γ-valley. This result suggests that the effective acceleration mass of electrons in the Γ-valley significantly increases with increasing F, most likely due to strong band mixing under very high fields.
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Y. M. Zhu, D. W. Zhang, Y. C. Yang, S. L. Zhuang, K. Hirakawa, "The effective mass of electron enhancement in Γ-valley in bulk GaAs under very high electric field investigated by time-domain terahertz spectroscopy", Proc. SPIE 7277, Photonics and Optoelectronics Meetings (POEM) 2008: Terahertz Science and Technology, 72770H (16 February 2009); doi: 10.1117/12.821094; https://doi.org/10.1117/12.821094
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