16 February 2009 A terahertz detector operating at room temperature
Author Affiliations +
A detector for terahertz(THz) operating at room temperature for detecting the THz signals is fabricated by using radio frequency (RF) magnetron sputtering and electronic beam lithography. This detector is composed of a planar logarithm periodic antenna of Al film and a microbolometer of Nb5N6 thin film, acting as both a radiation absorber and a temperature sensor, respectively which is fabricated on a high resistivity Si substrate with 100nm thick SiO2 layer. The best attainable responsivity of this device is over 100 volts per watt at 300K at a bias current of 2 mA,and the electrical noise equivalent powers (NEP) is as low as 3.98×10-10W•Hz1/2.These are good enough for many detecting and imaging arrays in THz frequencies.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
X. H. Lu, L. Kang, "A terahertz detector operating at room temperature", Proc. SPIE 7277, Photonics and Optoelectronics Meetings (POEM) 2008: Terahertz Science and Technology, 72770N (16 February 2009); doi: 10.1117/12.821570; https://doi.org/10.1117/12.821570

Back to Top