16 February 2009 A terahertz detector operating at room temperature
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Abstract
A detector for terahertz(THz) operating at room temperature for detecting the THz signals is fabricated by using radio frequency (RF) magnetron sputtering and electronic beam lithography. This detector is composed of a planar logarithm periodic antenna of Al film and a microbolometer of Nb5N6 thin film, acting as both a radiation absorber and a temperature sensor, respectively which is fabricated on a high resistivity Si substrate with 100nm thick SiO2 layer. The best attainable responsivity of this device is over 100 volts per watt at 300K at a bias current of 2 mA,and the electrical noise equivalent powers (NEP) is as low as 3.98×10-10W•Hz1/2.These are good enough for many detecting and imaging arrays in THz frequencies.
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X. H. Lu, L. Kang, "A terahertz detector operating at room temperature", Proc. SPIE 7277, Photonics and Optoelectronics Meetings (POEM) 2008: Terahertz Science and Technology, 72770N (16 February 2009); doi: 10.1117/12.821570; https://doi.org/10.1117/12.821570
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