16 February 2009 Temperature dependence of terahertz properties for InP
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Abstract
Terahertz (THz) time-domain spectroscopy (TDS) is attracting more and more attention recently, and has been growing up as a powerful technique for measuring the material parameters. Indium phosphide (InP), which with short carrier average collision time, high band-gap energy and low effective mass, is growing up as one of the best photoconductive materials for emitting and detecting THz waves. An n-type InP of 0.35 Ω•cm was measured with normal transmitted TDS system for the temperature and frequency ranges of 4.2 - 300 K and 0.2 - 4 THz, respectively. THz beam was placed in a closed box purged with dry nitrogen gas, and the sample was mounted in a MicrostatHe cryostat made by Oxford Instruments. Temperature dependence of THz properties for InP as a function of frequency was characterized.
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Caihong Zhang, Caihong Zhang, Yuanyuan Wang, Yuanyuan Wang, Jinlong Ma, Jinlong Ma, Biaobing Jin, Biaobing Jin, Weiwei Xu, Weiwei Xu, Lin Kang, Lin Kang, Jian Chen, Jian Chen, Peiheng Wu, Peiheng Wu, Masayoshi Tonouchi, Masayoshi Tonouchi, } "Temperature dependence of terahertz properties for InP", Proc. SPIE 7277, Photonics and Optoelectronics Meetings (POEM) 2008: Terahertz Science and Technology, 72770S (16 February 2009); doi: 10.1117/12.821683; https://doi.org/10.1117/12.821683
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