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19 February 2009 Study on temperature dependence of infrared optical properties of vanadium dioxide film
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Abstract
Vanadium dioxide as an optoelectronic material exhibits a phase transition between semiconductor and metallic phases at a temperature around 68°C, which has attracted the attention of researchers for many decades. A proper theoretical model was actually presented to analyze the infrared optical properties of vanadium dioxide film by using the theory of multilayer matrix calculation and a mended Sellmeier dispersion model. According to the theoretical model, the transmittances of the vanadium dioxide films were calculated at the temperature from 20°C to 100°C and the wavelength ranged from 400nm to 2500nm. The vanadium dioxide films with different thickness were prepared by magnetron sputtering on glass substrate, and the optical property measurement was carried out in the experiment. The simulated calculation of the theoretical model and experimental curves fitted very well. Study on the vanadium dioxide thin film thickness dependence of the optical properties, the transmittance of vanadium dioxide film reduced with the increasing in the thickness of film, and thermal hysteresis loop became wide and the phase transition temperature rose with the increasing in the thickness of the film. The thickness of the VO2 film had significant effect on its optical properties.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Qunjie Jiang, Yi Li, Shuangshuang Hu, Bin Wu, Xiojing Yu, and Haifang Wang "Study on temperature dependence of infrared optical properties of vanadium dioxide film", Proc. SPIE 7279, Photonics and Optoelectronics Meetings (POEM) 2008: Optoelectronic Devices and Integration, 72790B (19 February 2009); https://doi.org/10.1117/12.820660
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