High quality a-plane GaN layers grown by pulsed atomic-layer epitaxy on r-plane sapphire substrates

Jiangnan Dai; Zhihao Wu; Xiangyun Han; Qinghua He; Yuqing Sun; Chenhui Yu; Lei Zhang; Liangzhu Tong; Yihua Gao; Changqing Chen

doi:10.1117/12.823160

19 February 2009 High quality a-plane GaN layers grown by pulsed atomic-layer epitaxy on r-plane sapphire substrates

Jiangnan Dai, Zhihao Wu, Xiangyun Han, Qinghua He, Yuqing Sun, Chenhui Yu, Lei Zhang, Liangzhu Tong, Yihua Gao, Changqing Chen

Author Affiliations +

Proceedings Volume 7279, Photonics and Optoelectronics Meetings (POEM) 2008: Optoelectronic Devices and Integration; 72791B (2009) https://doi.org/10.1117/12.823160
Event: Photonics and Optoelectronics Meetings, 2008, Wuhan, China

Abstract

In this work, pulsed atomic-layer epitaxy (PALE) technique has been used to grow a-plane GaN films on r-plane sapphire substrates. During growth, the supply of N atoms was alternatively turned on and off while Ga atoms were continuously supplied with a constant flow rate. By optimizing the on/off periods of N source at 20/10 secs, pit-free GaN films have been obtained with significantly reduced full width at half maximum of X-ray rocking curve and brighter characteristic emission of stacking faults, as compared to the case using conventional metal-organic chemicalvapor deposition. The improved epitaxy quality and optical properties in PALE is due to the enhanced the Ga-adatom surface migration and improved the lateral-growth rate, which results in larger grain size and longer stacking faults.

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Jiangnan Dai, Zhihao Wu, Xiangyun Han, Qinghua He, Yuqing Sun, Chenhui Yu, Lei Zhang, Liangzhu Tong, Yihua Gao, and Changqing Chen "High quality a-plane GaN layers grown by pulsed atomic-layer epitaxy on r-plane sapphire substrates", Proc. SPIE 7279, Photonics and Optoelectronics Meetings (POEM) 2008: Optoelectronic Devices and Integration, 72791B (19 February 2009); https://doi.org/10.1117/12.823160

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