20 February 2009 AlxGa1-xN/InyGa1-yN DBR resonant-cavity based monolithic white LED
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Proceedings Volume 7279, Photonics and Optoelectronics Meetings (POEM) 2008: Optoelectronic Devices and Integration; 72791H (2009); doi: 10.1117/12.823264
Event: Photonics and Optoelectronics Meetings, 2008, Wuhan, China
Abstract
A monolithic white light-emitting diode (LED) with blue and yellow light active regions has been designed and studied. With the AlxGa1-xN / InyGa1-yN distributed Bragg reflector (DBR) resonant-cavity, the extraction efficiency and power of the yellow light are enhanced so that high quality white light can be obtained.
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Yu Chen, Lirong Huang, Shanshan Zhu, "AlxGa1-xN/InyGa1-yN DBR resonant-cavity based monolithic white LED", Proc. SPIE 7279, Photonics and Optoelectronics Meetings (POEM) 2008: Optoelectronic Devices and Integration, 72791H (20 February 2009); doi: 10.1117/12.823264; https://doi.org/10.1117/12.823264
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KEYWORDS
Light emitting diodes

Quantum wells

Reflectivity

Refractive index

Aluminum

Indium

CIE 1931 color space

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